Label-free detection of DNA has been successfully demonstrated on field effect transistor (FET) based devices. Since conducting organic materials was discovered and have attracted more and more research efforts by their profound advantages, this work will focus on utilizing an organic field effect transistor (OFET) as DNA sensor.
A field effect transistor is fabricated using a composite quantum well structure consisting of adjacent semiconductor quantum wells… Contents Dedication Acknowledgements Table of Contents 1. Introduction 2. Experiment 2.1 Sample properties 2.2 Device fabrication 2.2.1 Bonding pad 2.2.2 Hall bar Mesa 2.2.3
As the gate oxide thickness of the metal-oxide-semiconductor (MOS) Field Effect Transistor (FET) is continuously scaled down with lateral device dimensions, the gate leakage current during operation increases exponentially. This increase in leakage current raises concerns regarding device reliability. Substitute dielectrics with