This work presents the recent progress in research of synthesis and doping of cubic boron nitride (cBN) films, prepared by chemical and physical vapor deposition (CVD and PVD) methods. Cubic boron nitride (cBN) is a synthetic material which does not exist in
Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD)
The High Electron Mobility Transistor (HEMT) is a commonly used transistor for microwave and high power amplifiers around the world today. Typical application areas are space radio telescopes and cellular phones. Conventional HEMTs on today’s market use a Gallium,Arsenide (GaAs) substrate with
A computational toolbox was developed to perform full wafer response surface modeling of combinatorial chemical vapor deposition wafers. It consists of a library of MATLAB object-oriented functions that are based on accurate quadrature methods.,. Author: Leon, Maria del Pilar Source: University of
Project Title: Development of a Spatially Controllable Chemical Vapor Deposition System Most conventional chemical vapor deposition (CVD) systems do not have the spatial actuation and sensing capabilities necessary to control deposition uniformity, or to intentionally induce nonuniform deposition patterns for single-wafer combinatorial