In this work, piezoelectric resonators based on single crystal Al0.3Ga0.7As films are implemented. The combination of Si doped Al0.3Ga0.7As as electrode layers and moderate piezoelectric properties of updoped Al0.3Ga0.7As film leads to lattice matched single crystal resonators with high attainable quality factors and capability of integration with high speed circuits. To validate the fabrication process…
Author: Li, Lihua
Source: University of Maryland
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