In this Thesis, I have investigated multifunctional nanostructured Ti-Si-C thin films synthesized by magnetron sputtering in the substrate-temperature range from room temperature to 900 °C. The studies cover high-temperature growth of Ti3SiC2 and Ti4SiC3, low-temperature growth of Ti-Si-C nanocomposites, and Ti-Si-C-based multilayers, as well as their electrical, mechanical, and thermal-stability properties. Ti3SiC2 and Ti4SiC3 were synthesized homoepitaxially onto bulk Ti3SiC2 from individual sputtering targets and heteroepitaxially onto Al2O3(0001) substrates from a Ti3SiC2 target at substrate temperatures of 700 – 900 °C. In the latter case, the film composition exhibits excess C compared to the nominal target composition due to differences between species in angular and energy distribution and gas-phase scattering processes…
Contents
1 INTRODUCTION
1.1 A BRIEF HISTORY OF MATERIALS SCIENCE AND ENGINEERING
1.2 A BRIEF HISTORY OF THIN FILM TECHNOLOGY
1.3 BACKGROUND TO THIS THESIS
1.4 OBJECTIVE
1.5 OUTLINE
2 NANOTECHNOLOGY AND NANOSTRUCTURED MATERIALS
2.1 NANOTECHNOLOGY
2.2 NANOSTRUCTURED MATERIALS
2.2.1 Definitions
2.2.2 Nanostructured ternary materials
2.2.3 Mechanical properties
2.2.4 Electrical properties
3 TI-SI-C AND RELATED MATERIALS SYSTEMS
3.1 PHASE DIAGRAM
3.2 TIC
3.3 TI3SIC2 AND OTHER MAX-PHASES
3.4 TI5SI3CX AND OTHER NOWOTNY PHASES
3.5 LITERATURE REVIEW
3.5.1 Chemical Vapor Deposition (CVD)
3.5.2 Sputtering
3.5.3 Cathodic arc deposition
3.5.4 Pulsed laser deposition (PLD)
4 THIN-FILM SYNTHESIS
4.1 PHYSICAL VAPOR DEPOSITION (PVD)
4.1.1 Sputtering
4.1.2 Cathodic arc deposition
4.1.3 Pulsed laser deposition (PLD)
4.2 CHEMICAL VAPOR DEPOSITION (CVD)
5 SPUTTERING
5.1 THE PHYSICS OF SPUTTERING
5.1.1 What is a plasma?
5.1.2 The plasma, floating, and bias potentials
5.1.3 The sputtering yield
5.1.4 Transport of sputtered species
5.1.5 Effects at the substrate
5.2 MAGNETRON SPUTTERING
5.2.1 dc magnetron sputtering
5.2.2 High-power impulse magnetron sputtering (HIPIMS)
6 THIN-FILM GROWTH
6.1 NUCLEATION AND GROWTH
6.2 EPITAXIAL FILM GROWTH
6.3 POLYCRYSTALLINE FILM GROWTH
6.4 CONTROL OF FILM GROWTH
7 CHARACTERIZATION OF MATERIALS
7.1 STRUCTURAL CHARACTERIZATION
7.1.1 Scanning Electron Microscopy (SEM)
7.1.2 Transmission Electron Microscopy (TEM
7.1.3 X-ray Diffraction (XRD)
7.1.4 Atomic Force Microscopy (AFM)
7.2 COMPOSITIONAL CHARACTERIZATION
7.2.1 X-ray Photoelectron Spectroscopy (XPS)
7.2.2 Energy-dispersive X-ray Spectroscopy (EDX or EDS)
7.2.3 Ion-beam analysis
7.3 ELECTRICAL CHARACTERIZATION
7.3.1 Resistivity
7.3.2 Electrical contacts
7.4 MECHANICAL CHARACTERIZATION
7.4.1 Nanoindentation
8 SUMMARY AND CONTRIBUTION TO THE FIELD
8.1 MAX-PHASE THIN-FILM GROWTH
8.2 LOW-TEMPERATURE DEPOSITION AND ELECTRICAL PROPERTIES OF TI-SI-C-BASED NANOCOMPOSITE THIN FILMS
8.3 COMPOUND-TARGET SPUTTERING PROCESSES
8.4 PROPERTIES OF MAX PHASES AND NANOCOMPOSITES
8.4.1 Electrical properties of MAX phases
8.4.2 Mechanical properties of nanocomposites and MAX phases
8.4.3 Thermal stability
8.5 MULTILAYER STRUCTURES
8.5.1 Epitaxial TiC/SiC multilayers
8.5.2 Epitaxial TiC/Ti3SiC2 multilayers
9 ADDITIONAL RESULTS
9.1 IN-SITU XPS OF TI-SI-C THIN FILMS
9.2 MASS SPECTROMETRY
10 EPILOGUE
Author: Eklund, Per
Source: Linköping University
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