This work presents the recent progress in research of synthesis and doping of cubic boron nitride (cBN) films, prepared by chemical and physical vapor deposition (CVD and PVD) methods. Cubic boron nitride (cBN) is a synthetic material which does not exist in nature. This compound material was sythesized in 1950-s using a high-pressure high-temperature (HPHT) method for the first time. After that, great interest and considering effort was invested into the research of this material due to its outstanding physical and chemical properties and vast potentials for mechanical, electronic and electro-optical applications. In 1980s, synthesis of cBN thin films was demonstrated in a number of laboratories. The films, however, had limited thickness, low crystal quality, and suffered from delamination problems…
Contents
Chapter 1. Structures and Properties of Boron Nitride Polymorphs
1.1 Various Structures of Boron Nitrides and Their Properties
1.2 Mechanical and Chemical Properties of Cubic Boron Nitride
1.3 Electrical and Electronic Properties of Cubic Boron Nitride
Chapter 2. Thermodynamics and Kinetics of Boron Nitrides
Chapter 3. Synthesis Techniques of Cubic Boron Nitride
3.1 Brief Introduction to Synthesis of Cubic Boron Nitride
3.2 Mechanisms of Ion-assisted cBN Film Deposition
3.2.1 Sputter model
3.2.2 Thermal-spike model
3.2.3 Compressive stress model
3.2.4 Subplantation model
3.2.5 Summary of the models
3.3 Vapor Phase Deposition Techniques
3.3.1 Ion plating
3.3.2 Ion-assisted pulsed laser deposition
3.3.3 Sputtering deposition
3.3.4 Plasma enhanced chemical vapor deposition (PECVD)
3.3.5 Other deposition techniques
Chapter 4. Characterization of Boron Nitride Thin Films
4.1 Vibrational Characteristics of Crystalline Boron Nitride
4.2 Chemical Composition of Cubic Boron Nitride Films
4.3 Microstructures of Cubic Boron Nitride Films
Chapter 5. Experimental details
5.1 Preparation of Diamond Buffer Layers
5.2 Deposition of Intrinsic Cubic Boron Nitride Thin Films
5.2.1 Electron cyclotron resonance plasma enhanced chemical vapor deposition
5.2.2 Radio-frequency magnetron sputtering
5.2.3 Doping of cubic boron nitride thin films
5.2.3.1 In situ doping of cubic boron nitride thin films with SiF4 using ECR MPCVD system
5.2.3.2 Doping of cubic boron nitride thin films by beryllium ion implantation
5.2.3.3 Electrodes preparation on cubic boron nitride thin films
5.3 Characterization and Analysis of Cubic Boron Nitride Films
Chapter 6. Synthesis of High-quality Intrinsic Cubic Boron Nitride films by ECR MPCVD system
6.1 Deposition of Cubic Boron Nitride Films on Silicon Substrates
6.2 Direct Growth of High-quality Cubic Boron Nitride Films on Diamond Layers
6.3 Summary of Synthesis of High-quality Cubic Boron Nitride Films
Chapter 7. In Situ Doping of Cubic Boron Nitride Thin Films with SiF4 Gas
7.1 Background
7.2 Deposition of Silicon-doped BN Thin Films
7.3 Electrical Properties of Si-doped cBN Thin Films
7.4 Summary of In Situ Si Doping of Cubic Boron Nitride Thin Films
Chapter 8. Beryllium Implantation of Boron Nitride Thin Films
8.1 Brief Introduction to Ion Implantation Doping Technique
8.2 Beryllium Ion Implantation Doping of BN Thin Films
8.2.1 Beryllium doping of CVD cBN thin films by low energy ion implantation
8.2.2 Beryllium doping of PVD cBN thin films by low energy ion implantation
8.2.3 Beryllium doping of hBN thin films by low energy ion implantation
8.2.4 Discussions of doping effects of BN samples
8.3 Summary of Beryllium Doping of BN Thin Films by Ion Implantion
Chapter 9. Conclusions
References
Author: Ye, Qing
Source: City University of Hong Kong
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