A field effect transistor is fabricated using a composite quantum well structure consisting of adjacent semiconductor quantum wells…
Contents
Dedication
Acknowledgements
Table of Contents
1. Introduction
2. Experiment
2.1 Sample properties
2.2 Device fabrication
2.2.1 Bonding pad
2.2.2 Hall bar Mesa
2.2.3 Gate
3. Measurements and Results
3.1 Measurement set up
3.2 Observations and results
3.3 Discussion
4. Extension of work
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Author: Mampazhy, Arun Sankar
Source: University of Maryland
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